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In this paper, a W-band single-pole four-throw (SP4T) switch for multichannel high power transceiver chipset design is proposed based on a standard commercial 100 nm GaAs power pseudomorphic high electron mobility transistor (pHEMT) technology. Process used in this work is optimized for use in power amplifier (PA) design, resulting in a larger drain electrode capacitance. In order to reduce the effect of large drain capacitance for switch design, a proper series capacitor is introduced. This capacitor can not only reduce the overall capacitance of the turn-off state transistor but also resonate with the parasitic inductance of the turn-on state transistor to improve the isolation. As known, a short stub is adopted to compensate the remaining parasitic capacitance. For verification, a prototype is fabricated and measured. The measured results are in good agreement with the simulated ones. The fabricated SP4T switch achieves a bandwidth of 75 GHz-96 GHz, with an insertion loss and isolation about 4.8 dB and 28 dB, respectively. The fabricated switch also realizes a Pin1 dB about 22 dBm.