The requirements of multifunctionality in thin-film systems have led to the discovery of unique physical properties and degrees of freedom, which exist only in film forms. With progress in growth techniques, one can decrease the film thickness to the scale of a few nanometers (∼nm), where its unique physical properties are still pronounced. Among advanced ultrathin film systems, ferroelectrics have generated tremendous interest. As a prototype ferroelectric, the electrical properties of BaTiO3 (BTO) films have been extensively studied, and it has been theoretically predicted that ferroelectricity sustains down to ∼nm thick films. However, efforts toward determining the minimum thickness for ferroelectric films have been hindered by practical issues surrounding large leakage currents. In this study, we used ∼nm thick BTO films, exhibiting semiconducting characteristics, grown on a LaAlO3/SrTiO3 (LAO/STO) heterostructure. In particular, we utilized two-dimensional electron gas at the LAO/STO heterointerface as the bottom electrode in these capacitor junctions. We demonstrate that the BTO film exhibits ferroelectricity at room temperature, even when it is only ∼2 unit-cells thick, and the total thickness of the capacitor junction can be reduced to less than ∼4 nm. Observation of ferroelectricity in ultrathin semiconducting films and the resulting shrunken capacitor thickness will expand the applicability of ferroelectrics in the next generation of functional devices.

Using polarized neutron reflectometry (PNR) we measured the neutron spin dependent reflectivity from four LaAlO 3 /SrTiO 3 superlattices. This experiment implies that the upper limit for the magnetization induced by an 11 T magnetic field at 1.7 K is 2 emu/cm 3. SQUID magnetometry of the superlattices sporadically finds an enhanced moment, possibly due to experimental artifacts. These observations set important restrictions on theories which imply a strongly enhanced magnetism at the interface between LaAlO 3 and SrTiO 3 .

We studied the electrical conduction in the LaAlO3/SrTiO3 (LAO/STO) interface electron system with a sub‐critical LAO layer thickness of ∼3.5 unit cells (uc). It was found that the true dividing point between metallic and insulating behaviour without gating lies near the LAO thickness of 3.5 uc. Our marginally metallic 3.5 uc sample showed a sharp transition to insulating state at temperatures which strongly depended on the applied negative back‐gate voltage. The superior gate‐controllability of the sample was attributed to its sheet carrier density which was an order of magnitude lower than those of conducting LAO/STO samples with 4 uc or more of LAO layers. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Numerous investigations on the development of the relaxor-PbTiO3 ferroelectric crystals have been carried out since their extraordinary properties were revealed. Recent developments on these crystals have offered further advances in electromechanical applications. In this review, recent developments on relaxor-PbTiO3 crystals and their practical applications are reviewed. The single crystal growth methods are first discussed. Two different strategies, poling and doping, for piezoelectric improvement are surveyed in the following section. After this, the anisotropic features of the single crystals are discussed. Application perspectives arising from the property improvements for electromechanical devices are finally reviewed.