Mechatronic agricultural machines and equipment are continuously increasing their complexity and cost. In order to ensure their efficiency and reliability and preserve their value, it is important to actively monitor the working loads and register damaging and wear occurring on critical components. This approach needs the introduction of sensors on the machine, which allow continuous monitoring and evaluate the residual life of components. The work presents the development and testing of an innovative low-cost systems for monitoring and diagnostic of off-highway vehicles. The sensor measures the torque of a mechanical power transmissions, and it was designed especially for agricultural machinery. The torque transducer monitors the mechanical power flowing from the tractor into the gearbox and the agricultural implement and is fully integrated with the power take-off driveshaft, thus being generally applicable. The design and development of the transducer was performed following a quality function deployment approach. The system is less expensive considering the typical torque measuring system commercially available and, thanks to its wireless module and integrated power supply, it is reliable and generally applicable to many power take-off to implement combinations.

We present a new method to synthesize bulk indium nitride by means of a simple solid-state chemical reaction carried out under hydrostatic high-pressure/high-temperature conditions in a multi-anvil apparatus, not involving gases or solvents during the process. The reaction occurs between the binary oxide In 2 O 3 and the highly reactive Li 3 N as the nitrogen source, in the powder form. The formation of the hexagonal phase of InN, occurring at 350 °C and P ≥ 3 GPa, was successfully confirmed by powder X-ray diffraction, with the presence of Li 2 O as a unique byproduct. A simple washing process in weak acidic solution followed by centrifugation allowed us to obtain pure InN polycrystalline powders as a precipitate. With an analogous procedure, it was possible to obtain pure bulk GaN, from Ga 2 O 3 and Li 3 N at T ≥ 600 °C and P ≥ 2.5 GPa. These results point out, particularly for InN, a clean, and innovative way to produce significant quantities of one of the most promising nitrides in the field of electronics and energy technologies.

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