Tungsten diselenide (WSe2) is a two-dimensional material that is of interest for next-generation electronic and optoelectronic devices due to its direct bandgap of 1.65 eV in the monolayer form and excellent transport properties. However, technologies based on this 2D material cannot be realized without a scalable synthesis process. Here, we demonstrate the first scalable synthesis of large-area, mono and few-layer WSe2 via metal-organic chemical vapor deposition using tungsten hexacarbonyl (W(CO)6) and dimethylselenium ((CH3)2Se). In addition to being intrinsically scalable, this technique allows for the precise control of the vapor-phase chemistry, which is unobtainable using more traditional oxide vaporization routes. We show that temperature, pressure, Se:W ratio, and substrate choice have a strong impact on the ensuing atomic layer structure, with optimized conditions yielding >8 μm size domains. Raman spectroscopy, atomic force microscopy (AFM), and cross-sectional transmission electron microscopy (TEM) confirm crystalline monoto-multilayer WSe2 is achievable. Finally, TEM and vertical current/voltage transport provide evidence that a pristine van der Waals gap exists in WSe2/graphene heterostructures.

Vertical stacking of two-dimensional (2D) crystals has recently attracted substantial interest due to unique properties and potential applications they can introduce. However, little is known about their microstructure because fabrication of the 2D heterostructures on a rigid substrate limits one's ability to directly study their atomic and chemical structures using electron microscopy. This study demonstrates a unique approach to create atomically thin freestanding van der Waals heterostructures-WSe2/graphene and MoS2/graphene-as ideal model systems to investigate the nucleation and growth mechanisms in heterostructures. In this study, we use transmission electron microscopy (TEM) imaging and diffraction to show epitaxial growth of the freestanding WSe2/graphene heterostructure, while no epitaxy is maintained in the MoS2/graphene heterostructure. Ultra-high-resolution aberration-corrected scanning transmission electron microscopy (STEM) shows growth of monolayer WSe2 and MoS2 triangles on graphene membranes and reveals their edge morphology and crystallinity. Photoluminescence measurements indicate a significant quenching of the photoluminescence response for the transition metal dichalcogenides on freestanding graphene, compared to those on a rigid substrate, such as sapphire and epitaxial graphene. Using a combination of (S)TEM imaging and electron diffraction analysis, this study also reveals the significant role of defects on the heterostructure growth. The direct growth technique applied here enables us to investigate the heterostructure nucleation and growth mechanisms at the atomic level without sample handling and transfer. Importantly, this approach can be utilized to study a wide spectrum of van der Waals heterostructures.

Detailed information regarding the alloy deposition/ dealloying and fabrication steps, the energy dispersive X-ray spectral characterization, histology on chronically implanted mice and characterization of explanted electrodes, electrochemical impedance spectroscopy and their small signal components, sterilization effects of autoclave, ethylene oxide, and sterrad, on impedance distribution, comparison of surface and depth recorded single units and extracted composite receptive fields in songbird experiments, and comparison of recordings using PtNR devices and NeuroNexus ECoG Pt electrodes on NHP and corresponding power-frequency plots (PDF)

The utilization of tungsten diselenide (WSe2) in electronic and optoelectronic devices depends on the ability to understand and control the process-property relationship during synthesis. We demonstrate that spectroscopic ellipsometry is an excellent technique for accurate, non-destructive determination of ultra-thin (<30 nm) WSe2 properties. The refractive index (n) and extinction coefficient (k) were found to be independent of thickness down to 1.3 nm, and were used to determine film thickness, which was confirmed to be within 9% of values found via atomic force microscopy. Finally, the optical bandgap was found to closely correlate with thickness, ranging from 1.2 to 1.55 eV as the WSe2 is thinned to the equivalent of 2 atomic layers.

Poly(3,4-ethylenenedioxythiophene) or PEDOT is a promising candidate for next-generation neuronal electrode materials but its weak adhesion to underlying metallic conductors impedes its potential. An effective method of mechanically anchoring the PEDOT within an Au nanorod (Au-nr) structure is reported and it is demonstrated that it provides enhanced adhesion and overall PEDOT layer stability. Cyclic voltammetry (CV) stress is used to investigate adhesion and stability of spin-cast and electrodeposited PEDOT. The Au-nr adhesion layer permits 10 000 CV cycles of coated PEDOT film in phosphate buffered saline solution without delamination nor significant change of the electrochemical impedance, whereas PEDOT coating film on planar Au electrodes delaminates at or below 1000 cycles. Under CV stress, spin-cast PEDOT on planar Au delaminates, whereas electroplated PEDOT on planar Au encounters surface leaching/decomposition. After 5 weeks of accelerated aging tests at 60 °C, the electrodeposited PEDOT/ Au-nr microelectrodes demonstrate a 92% channel survival compared to only 25% survival for spin-cast PEDOT on planar films. Furthermore, after a 10 week chronic implantation onto mouse barrel cortex, PEDOT/Au-nr microelectrodes do not exhibit delamination nor morphological changes, whereas the conventional PEDOT microelectrodes either partially or fully delaminate. Immunohistochemical evaluation demonstrates no or minimal response to the PEDOT implant.