No abstract

The aim of this study is to improve the DC and RF performance of a conventional AlGaN/GaN HEMT and to suppress the short-channel effects by adding a BGaN backbarrier layer under the channel which improves the electron confinement in the two-dimensional electron gas 2DEG. Using TCAD Silvaco, we simulate some DC and RF characteristics, we note that the use of only 5 nm BGaN back-barrier layer shows a remarkable improvement compared to a conventional HEMT of 35% in the maximum drain current, 30% in the transconductance, 13% in the cut off frequency and 12% in the maximum oscillation frequency.