Despite the improvement of the quality of CVD grown single-layer graphene on copper substrates, transferring the two-dimensional layer without introducing any unintentional defects still poses a challenge. While many approaches focus on optimizing the transfer itself or on necessary post-transfer cleaning steps, we have focused on developing a pre-treatment of the monolayer graphene on copper to improve the quality and reproducibility of the transfer process. By pressing an ethylene-vinyl acetate copolymer foil onto the monolayer graphene on copper using a commercially available vacuum bag sealer graphene is stabilized by the attachment of functional carbon groups. As a result, we are able to transfer graphene without the need of any supporting layer in an all-H2O wet-chemical transfer step. Despite the general belief that the crumbling of graphene without a support layer in a H2O environment is caused due to differences in surface energy, we will show that this assumption is false and that this behavior is caused rather by the polar interactions between graphene and water. Suppressing these interactions protects graphene from ripping and results in extremely clean, highly crystalline graphene with a coverage close to 100%.

We describe a setup for the analysis of secondary ions and neutrals emitted from solid surfaces and two-dimensional materials during irradiation with highly charged ions. The ultra-high-vacuum setup consists of an electron beam ion source to produce bunches of ions with various charge states q (e.g. Xe 1+ -Xe 46+ ) and thus potential energies, a deceleration/acceleration section to tune the kinetic energy of the ions in the range of 5 keV to 20 x q keV, a sample stage for laser-cleaning and positioning of freestanding as well as supported samples, a pulsed excimer laser for postionization of sputtered neutrals, and a reflectron type time-of-flight mass spectrometer enabling us to analyze mass and velocity distributions of the emitted particles. With our setup, contributions from potential and kinetic energy deposition can be studied independently of each other. Charge dependent experiments conducted at a constant kinetic energy show a clear threshold for the emission of secondary ions from SrTiO 3 . Data taken with the same projectile charge state, but at a different kinetic energy, reveals a difference in the ratio of emitted particles from MoS 2 . In addition, first results are presented, demonstrating how velocity distributions can be measured with the new setup.

In order to investigate the different role of kinetic and potential projectile energy for secondary ion formation, the authors have measured the ionization probability of indium atoms sputtered from a clean indium surface under irradiation with rare gas (Xeq+) ions of different charge states q at the same kinetic impact energy of 20 keV. In this energy range, the kinetic energy of the projectile is predominantly deposited via nuclear stopping, leading to a collision-dominated sputtering process. The authors find that the ionization probability increases significantly if a highly charged ion is used as a projectile, where the ionization energy becomes comparable to or even exceeds the kinetic energy, indicating that a higher level of electronic substrate excitation induced by the potential energy stored in the projectile can boost the secondary ion formation process. This experimental result is discussed in terms of microscopic model calculations describing the secondary ion formation process. At the same time, the authors observe a significant change of the emission velocity distribution of the sputtered particles, leading to a pronounced low-energy contribution at higher projectile charge states. It is shown that this “potential sputtering” contribution strongly depends on surface chemistry even under conditions where the surface is dynamically cleaned by interleaved 5 keV Ar+ ion bombardment.

A key problem in ion-solid interaction is the lack of experimental access to the dynamics of the processes. While it is clear that the mechanisms of interaction and sputtering depend on the kinetic and potential energy (sum of ionization energies) of the projectile, the importance and interplay of the various interaction mechanisms are unknown. Here, we have irradiated substrate-supported (Au, SiO 2 ) monolayers of MoS 2 with highly charged xenon ions (HCIs; charge state: 17+ to 40+), extracted the emitted neutral postionized Mo particles in a timeof-flight mass spectrometer, and determined their velocity distributions. We find two main contributions, one at high velocities and a second at lower velocities, and assign them to kinetic and potential effects, respectively. We show that for slow HCIs (5 keV) the interaction mechanisms leading to particle emission by electronic excitation and momentum transfer, respectively, are independent of each other, which is consistent with our atomistic simulations. Our data suggest that the predominant mechanism for potential sputtering is related to electron-phonon coupling, while nonthermal processes do not play a significant role. We anticipate that our work will be a starting point for further experiments and simulations to better understand the interplay of processes arising from E pot and E kin .

Synopsis For many attractive applications of single layer MoS2 such as in optoelectronics e.g., the sample is supported by a substrate. Its importance for the modification through ion irradiation is here experimentally investigated by the analysis of sputtered particle of MoS2 on SiO2 and Au substrates under highly charged ion irradiation. The velocity distribution of the sputtered atoms is less affected by the substrate using highly charged projectiles than using slightly charged ones. Furthermore, we can show that potential sputtering causes additional emission of particles with lower kinetic energy.