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All-inorganic perovskite quantum dots (APQDs) have emerged as excellent materials which have been widely used in numerous micro-nano photoelectric devices. However, resistive random access memory (RRAM) devices based on APQDs are relatively scarce. In this work, RRAM based on CsPbBr3 APQDs prepared by the solution processed method was fabricated at room temperature. The sandwich structure memory device shows high reproducibility, good data retention ability, and light assisted multilevel storage capability. The resistance ratio (ON/OFF) of the RRAM device between the high resistance state and the low resistance state reaches almost 107. Additionally, the device exhibits high performances under low power consumption—low reading voltage (−0.3 V) and operation voltage (−2.4 V/1.55 V). It is suggested that the connection and rupture of conducting filaments, which are formed by Br vacancies under an electric field, are responsible for the resistive switching effect. Our work provides an opportunity to develop the next generation high-performance and stable nonvolatile memory devices.

The detection of partial discharge and analysis of the composition and content of sulfur hexafluoride SF6 gas components are important to evaluate the operating state and insulation level of gas-insulated switchgear (GIS) equipment. This paper reported a novel sensing material made of pure ZnO and NiO-decorated ZnO nanoflowers which were synthesized by a facile and environment friendly hydrothermal process for the detection of SF6 decomposition byproducts. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) were used to characterize the structural and morphological properties of the prepared gas-sensitive materials. Planar-type chemical gas sensors were fabricated and their gas sensing performances toward the SF6 decomposition byproducts SO2, SO2F2, and SOF2 were systemically investigated. Interestingly, the sensing behaviors of the fabricated ZnO nanoflowers-based sensor to SO2, SO2F2, and SOF2 gases can be obviously enhanced in terms of lower optimal operating temperature, higher gas response and shorter response-recovery time by introducing NiO. Finally, a possible gas sensing mechanism for the formation of the p–n junctions between NiO and ZnO is proposed to explain the enhanced gas response. All results demonstrate a promising approach to fabricate high-performance gas sensors to detect SF6 decomposition byproducts.

Ultra-stable broadband photoelectric tunable PbS QD based RRAM device with flexibility and multilevel data storage ability was demonstrated.

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