The physical investigation of surfaces and their properties crucially depends on their quality. Such investigations are commonly performed in an ultra-high vacuum environment. Thereby, the transfer of samples among different setups and under ambient conditions is desirable. The usage of a capping layer for the protection of surfaces against contaminations during long-time storage and transfer, and the subsequent temperature-controlled decapping is an established approach. However, a residual-free removal of the capping layer may present a challenge. Here, we systematically investigate the decapping process of a tellurium protected topological insulator Bi2Te3. We give evidence for the material segregation from the contaminated capping layer surface to the substrates. Therefore, a simple, temperature controlled decapping is not sufficient. We demonstrate that near perfect surfaces can be reliably obtained even after long-time storage through a combination of an initial argon ion sputtering process and a following heating for decapping. This approach is suitable for dedicated analysis systems as well as for industrial applications, large throughput of samples of arbitrary shapes, and is easily implemented in existing setups.