Results are presented on the electrical and optical‐absorption spectra (hv < Eg) of p‐ZnGeP crystals before and after electron irradiation (2 MeV, 300 K), and post‐irradiated annealing (300 to 870 K). The defect or impurity level at about (Ev + 0.6) eV (N ≊ 5 × 1017 cm−3) which is responsible for the optical‐absorption in the spectral range 0.6 to 1.3 eV is found in initial samples. The enlightment of the samples in the spectral range 0.6 to 1.3 eV is found after electron irradiation and this is connected with the Fermi level moving up to ≈︁ Eg/2 during irradiation. Isochronal annealing experiments indicate three regions of annealing at temperature 410 to 450 K (Ea ≊ = 1.1 eV), 480 to 550 K (Ea ≊ 1.4 eV) and 550 to 770 K. It is supposed that the electrical and optical property changes of ZnGeP2 upon electron bombardment are connected with formation of simple point defects [Vzn], [VGe], and [VP].

The effect of 2 MeV electron bombardment at 300 K on the electrical (R, σ) properties of n‐and p‐CdGeAs2 are studied. Specimens of n‐ and p‐CdGeAs2 are closely‐compensated after sufficiently heavy electron bombardment, and have n‐type conductivity with a resulting free electron density ≈︁ 3 × 1017 cm−3 at 300 K. Isochronal annealing experiments indicate two regions of restoring of R and σ, at about 300 to 450 K acceptor defect and at about 470 to 600 K donor defect annealing.

No abstract