The cosmological constant is estimated by considering the surface tension of supervoids in a void-dominated cosmic fluid by which we can get a possible source of dark energy. Looking at voids as bubbles, we define the concept of surface tension which is shown to have an almost constant value for supervoids that are enclosed by superclusters. The surface tensions of voids are computed by dimensional method for galaxies and superclusters with different values for each group. At large scale which vast voids are dominant the positive cosmological constants obtained of order ( ≃ +10−52m−2), which are very close to those given by Planck.
In this paper, we study the [Formula: see text] gravity model in the presence of bulk viscosity by the flat Friedmann–Robertson–Walker metric. The field equation is obtained by teleparallel gravity with a tetrad field. The universe components are considered matter and dark energy, with the dark energy component associated with viscous [Formula: see text] gravity. After calculating the Friedmann equations, we obtain the energy density, pressure, and equation of state of dark energy in terms of the redshift parameter. Afterward, we plot the corresponding cosmological parameters versus the redshift parameter and examine the accelerated expansion of the universe. In the end, we explore the system stability using a function called the speed sound parameter.
We have investigated the electron transport properties of a N24B24 molecule coupled to two metallic contacts with a combination of GW approximation and the non-equilibrium Green's-function technique. The calculations indicate that the four and three resonant tunneling peaks are seen for the density of states (DOS) curves in the cases of single and multiple atomic contacts, respectively. The off state and negative differential resistance (NDR) effect are observed in the I-V characteristics of the N24B24 molecule. The NDR behavior is also observed in voltages of about ∓4.5, ∓4, ∓4.6, and ∓4.3 V for one, four, six, and eight atomic contacts. Also, the I-V characteristics of N24B24 are in off state at low voltages that is independent of the contact types. The current curves against the gate voltage depend on contact types and indicate that N24B24 molecule behaves as a semiconductor.
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