In this work, we have experimentally investigated the features of tunneling current-voltage (I-V) curves in the case of 1D-dissipative tunneling in the limit of weak dissipation for various both synthesized (and in the process of synthesis) metallic nanoparticles (NPs) (Ni, Co, Fe) in a combined atomic force microscope/scanning tunneling microscope (AFM/STM) system in an external electric field. It is shown that for individual tunneling I-V curves, a single peak is observed at one of the polarities. In the process of synthesizing metallic nanoparticles with a change in polarity, instead of nanoclusters, it is possible to synthesize toroidal structures (shown by the example of "growing" Ni-NPs). The investigated effects of 1D-dissipative tunneling made it possible to develop the author's method of controlled growth of quantum dots in a combined AFM/STM system. A qualitative agreement was obtained between the experimental and theoretical results, which allows us to assume the possibility of experimental observation of the macroscopic dissipative tunneling effects and thereby confirm the hypothesis expressed in the pioneering works of A. J. Leggett, A. I. Larkin, Yu. N. Ovchinnikov and other authors. KEYWORDS metal nanoparticles, dissipative tunneling, conductive AFM ACKNOWLEDGEMENTS The authors thank prof. A. J.

Effect of tunneling decay for the quasi-stationary A + -state, in an impurity complex A + + e (a hole, localized on a neutral acceptor, interacting with an electron, localized in the ground state of a quantum dot) on the photodielectric effect, associated with the excitation of impurity complexes A + + e in a quasi-zerodimensional structure, has been studied in the zero-radius potential model in the one-instanton approximation. Calculation of the binding energy of a hole in an impurity complex A + + e was performed in the zero radius potential model in the adiabatic approximation. It is shown that as the probability of dissipative tunneling increases, the binding energy of a hole in a complex A + + e decreases, which is accompanied by an increase in the effective localization radius of the impurity complex and, accordingly, an increase in the magnitude of the photodielectric effect. The spectral dependence of the photodielectric effect has been calculated in the dipole approximation taking into account the dispersion of the quantum dot radius. A high sensitivity of the magnitude of the photodielectric effect to such parameters of dissipative tunneling as the frequency of the phonon mode, temperature, and coupling constant with the contact medium, has been revealed.