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High-temperature stability of ion-implanted zirconia and spinel J. Appl. Phys. 97, 113509 (2005) ) and at five temperatures: 80, 300, 573, 773, and 1073 K. Irradiated samples have been characterized by Rutherford backscattering spectroscopy in channeling mode, X-ray diffraction and transmission electron microscopy techniques in order to determine the disordering kinetics. All experimental results show that, whatever is the irradiation temperature, the damage build-up follows a multi-step process. In addition, the disorder level at high fluence is very similar for all temperatures. Thus, no enhanced dynamic annealing process is observed. On the other hand, transitions in the damage accumulation process occur earlier in fluence with increasing temperature. It is shown that temperature as low as 573 K is sufficient to accelerate the disordering process in ion-irradiated YSZ. V C 2014 AIP Publishing LLC. [http://dx

SiO 2 layers 180 nm thick are implanted with 120 keV Ge ϩ ions at a fluence of 1.2ϫ10 16 cm Ϫ2 . The distribution and coarsening evolution of Ge nanoclusters are characterized by Rutherford backscattering spectrometry and transmission electron microscopy and the results are correlated with photoluminescence measurements as a function of the annealing temperatures in the 400°C рTр900°C range. At 400°C we observe a monomodal array of clusters characterized by a mean diameter ͗͘ϭ2.2 nm which increases to ͗͘ϭ5.6 nm at 900°C. This coarsening evolution occurs concomitantly with a small change of the total cluster-matrix interface area and an increase of the Ge content trapped in observable nanoclusters. However, at 900°C a significant fraction of up to about 20% of the Ge content still remains distributed in the matrix around the nanoparticles. The results are discussed in terms of possible atomic mechanisms involved in the coarsening behavior that lead to the formation of the oxygen deficiency luminescence centers.

Characterization of stoichiometric surface and buried SiN films fabricated by ion implantation using extended xray absorption fine structure

The epitaxial growth of FeSi2 silicides was studied by using ion-beam epitaxial crystallization (IBIEC) of Fe-implanted Si(001) samples. By employing Rutherford backscattering/channeling spectrometry and transmission electron microscopy it was possible to determine that the IBIEC process produces a γ-, α-, and β-FeSi2 phase sequence, with increasing Fe concentration along the implantation profile. The critical concentrations for γ→α and α→β phase transitions are 11 and 21 at. %, respectively. A study of the thermal behavior of these phases shows that the γ- and α-FeSi2 are metastable with respect to the β-FeSi2 phase. The γ to β-FeSi2 transition starts at 700 °C via an Ostwald ripening process. In addition a 800 °C, 1 h anneal of high Fe concentration samples produces a complete α and γ to β-FeSi2 transformation. Finally, it is demonstrated that a regular or a rapid thermal annealing on Fe-implanted Si samples induces only the formation of a β-FeSi2 phase.