The 0 to 1 inter-sub-band electronic transition is studied in (100) GaAs/AI,,,,Gao.&s multi-quantum well structures as a function of temperature between 4.2 K and room temperature. Samples doped in the barrier or in the well are compared. A lineshape calculation allows u s to separate the broadening of a single energy state from the intrinsic broadening caused by the different sub-band dispersions. Qualitatively different behaviour is found for modulation doped and well doped samples.

No abstract

No abstract