We present a physics-based hot-carrier degradation (HCD) model and validate it against measurement data on SiON n-channel MOSFETs of various channel lengths, from ultrascaled to long-channel transistors. The HCD model is capable of representing HCD in all these transistors stressed under different conditions using a unique set of model parameters. The degradation is modeled as a dissociation of Si-H bonds induced by two competing processes. It can be triggered by solitary highly energetical charge carriers or by excitation of multiple vibrational modes of the bond. In addition, we show that the influence of electron-electron scattering (EES), the dipolefield interaction, and the dispersion of the Si-H bond energy are crucial for understanding and modeling HCD. All model ingredients are considered on the basis of a deterministic Boltzmann transport equation solver, which serves as the transport kernel of a physics-based HCD model. Using this model, we analyze the role of each ingredient and show that EES may only be neglected in long-channel transistors, but is essential in ultrascaled devices.

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Trabecular bone is a porous mineralized tissue playing a major load bearing role in the human body. Prediction of age-related and disease-related fractures and the behavior of bone implant systems needs a thorough understanding of its structure-mechanical property relationships, which can be obtained using microcomputed tomography-based finite element modeling. In this study, a nonlinear model for trabecular bone as a cohesive-frictional material was implemented in a large-scale computational framework and validated by comparison of μFE simulations with experimental tests in uniaxial tension and compression. A good correspondence of stiffness and yield points between simulations and experiments was found for a wide range of bone volume fraction and degree of anisotropy in both tension and compression using a non-calibrated, average set of material parameters. These results demonstrate the ability of the model to capture the effects leading to failure of bone for three anatomical sites and several donors, which may be used to determine the apparent behavior of trabecular bone and its evolution with age, disease, and treatment in the future.

We propose two different approaches to describe carrier transport in n-laterally diffused MOS (nLDMOS) transistor and use the calculated carrier energy distribution as an input for our physical hot-carrier degradation (HCD) model. The first version relies on the solution of the Boltzmann transport equation using the spherical harmonics expansion method, while the second uses the simpler drift-diffusion (DD) scheme. We compare these two versions of our model and show that both approaches can capture HCD. We, therefore, conclude that in the case of nLDMOS devices, the DD-based variant of the model provides good accuracy and at the same time is computationally less expensive. This makes the DD-based version attractive for predictive HCD simulations of LDMOS transistors.Index Terms-Drift-diffusion (DD) scheme, hot-carrier degradation (HCD), n-laterally diffused MOS (nLDMOS), spherical harmonics expansion (SHE).

In nm-sized FET devices with just a few gate oxide defects, the typically measured threshold voltage shifts are not obviously correlated with the device behavior at high gate bias. The largest shifts observed at the threshold voltage after the capture of a single carrier are reduced at higher gate biases. This degradation-mitigating effect is further shown to be amplified at lower channel doping. The understanding gained from 3D numerical simulations is captured in a simple analytic description of a single trapped-charge impact on the FET characteristics in the entire gate bias range. Potential use is illustrated in an improved lifetime projection and in circuit simulations of timedependent variability. Time-dependent variability, single-carrier effects, circuit simulations, lifetime projections