No abstract

A New Tungsten Gate Metal Oxide Semiconductor Capacitor Using a Chemical Vapor Deposition Process.-In the new W gate MOS process, tungsten is vapor deposited on a thin, sacrificial poly-Si layer which is completely consumed during the CVD process. The process yields a nearly pure W metal gate after SiH4 reduction of WF6 at 300 • C. Compared with sputterdeposited W gate MOS capacitors, the CVD capacitor has a lower resistivity gate, lower intrinsic tungsten film stress, lower interface state density, and a higher charge-to-breakdown value, which makes it promising for future VLSI application. -(YEH, W.-K.; SHIAU, Y.-C.; CHEN, M.-C.; J. Electrochem.

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