Molecular beam techniques have been utilized to measure the dissociative chemisorption probability at zero surface coverage S0 for D2(H2) on Pt(111) as a function of initial energy Ei, angle of incidence θi, surface temperature Ts, isotopic mass and nozzle temperature Tn. S0 shows a large increase with translational energy, but no threshold in Ei, a peaking at θi=0°, and an independence with Ts, isotope and Tn. These results are interpreted in terms of direct dissociative chemisorption on the Pt(111) terraces. The dynamical picture that emerges is that although there is no significant barrier to dissociation along the minimum energy path, barriers do exist along nonoptimal reactive trajectories. Thus, the ‘‘translational activation’’ and other dynamical observations are intimately related to the multidimensional aspects of the dissociative potential energy surface. Some aspects of the dissociative chemisorption, however, still seem somewhat surprising within this general description.

This paper reports detailed molecular beam measurements of the sticking coefficient at zero coverage for O2 on a Pt(111) surface as a function of initial energy (Ei), angle of incidence (θi), and surface temperature (Ts). Under most conditions the sticking coefficient measures the probability for dissociative chemisorption. These results demonstrate that both precursor mediated and quasi-direct dissociation can be observed, depending upon the initial conditions. The quasi-direct process is revealed by a step increase in the sticking with Ei. This feature scales intermediately between Ei and the normal component En, and is weakly dependent on Ts. The precursor mediated sticking is well described by standard precursor kinetic models. At low Ei and Ts, sticking measures trapping into a molecularly adsorbed state. This trapping decreases more rapidly with Ei than anticipated from simple models and scales intermediately between Ei and En. The sticking results are discussed in terms of likely dynamic processes occurring on a potential energy surface which contains an intermediate molecularly adsorbed species formed by charge transfer from the metal to the O2.

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%e report here a systematic study of the electrical properties of a large number of metal/n-type GaAs (Cr, Mn, Sn, Ni, Al, Pd, Cu, Ag, Au) diodes. Diodes were fabricated on cleaved GaAs (110) surfaces under ultrahigh-vacuum conditions with in situ metal deposition. Using current-voltage (I-V) and capacitance-voltage ( C-V) measuring techniques, we were able to obtain very reliable and consistent determinations of the barrier height Ps and ideality factor n A.ll of the metalsemiconductor systems formed on lightly doped (5)& 10' /cm3) n-type GaAs substrates were characterized by near-unity (1. 05) ideality factors. A decrease in the effective I-V barrier height, an increase in the ideality factor in forward bias and a strong valtage dependence on the thermionic emission currents in reverse bias were found for diodes formed on the more heavily doped samples.These changes are essentially metal independent, but depend strongly on the doping of the substrate. The characterization (and elimination in some cases) of peripheral leakage currents from the thermionic emission current is found to be essential in obtaining consistent results in our work and in reinterpreting some of the prior work in the literature. The dominant leakage current flows through a small area, low barrier at the periphery of the device and can be eliminated by mesa etching. The

In in vivo tissue engineering, many implanted cells die because of hypoxic conditions immediately postimplantation. The aim of this study was to determine whether delayed myoblast implantation, at day 4 or 7, improves myoblast survival compared with implantation at day 0 in an in vivo arterio-venous loop (AB loop) chamber model. In adult inbred Sprague-Dawley rats, an AB loop was inserted into a plastic chamber (day 0). In Group I, day 0, two million DiI-labeled (neonatal inbred) myoblasts were implanted around the AB loop. In Groups II and III, day 0, the AB loop was created and inserted into a novel delayed cell seeding chamber, and 4 (Group II) or 7 days (Group III) later the delay chamber was seeded with 2 million DiI-labeled myoblasts. Constructs were harvested 7-day postmyoblast implantation, for morphometric determination of DiI/DAPI-positive myoblasts/mm(2), and percent vascular volume on Griffonia simplicifolia lectin (endothelial cell marker)-labeled tissue sections. Control (nonmyoblast seeded) and experimental (myoblast seeded) constructs demonstrated similar capillary and tissue growth patterns. DiI/DAPI-labeled myoblasts/mm(2) appeared in similar numbers in constructs implanted at days 0 and 4, but increased markedly in day-7 implanted constructs. The percent vascular volume increased significantly (p = 0.03) over time. A positive correlation existed between myoblast survival and construct vascularity (p = 0.017). In conclusion, delaying myoblast implantation to 7-day postconstruct assembly, when new capillary growth is well established, significantly correlates with increased myoblast survival and indicates that cell seeding in regenerative procedures should always occur into an established vascular bed.