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Electronic and chemical passivation of CdSe nanocrystals (quantum dots) has been achieved with a thin ZnSe overlayer grown in solution from trioctylphosphine selenide and diethylzinc. Layered particles with a [ZnSe/CdSe] ratio ranging from 0 to ∼5.0 were prepared and characterized by optical absorption spectroscopy, photoluminescence, high-resolution transmission electron microscopy, Auger electron spectroscopy, and X-ray scattering. The overgrown particles were crystalline and displayed band-edge absorption and emission characteristic of the initial CdSe nuclei. Thin-film quantum dot composites incorporating bare and overcoated CdSe nanocrystals in a ZnSe matrix were synthesized by electrospray organometallic chemical vapor deposition (ES-OMCVD). The photoluminescence spectra of the composites with bare CdSe dots were dominated by broad deep-level emission and the photoluminescence yield deteriorated with increasing deposition temperature. In contrast, the composites incorporating the overcoated dots showed sharp band-edge emission. The presence of a preformed ZnSe layer resulted in a dramatic enhancement of the band-edge photoluminescence yield (by 2 orders of magnitude). The photoluminescence properties of composites with the passivated dots were insensitive to deposition temperature over the range studied.

Charge transport in functionalized multi-wall carbon nanotube-Nafion composite J. Appl. Phys. 112, 053706 (2012) Tailoring plasmon resonances in the deep-ultraviolet by size-tunable fabrication of aluminum nanostructures Appl. Phys. Lett. 101, 081110 (2012) A critical evaluation of the 0-3 approach for magnetoelectric nanocomposites with metallic nanoparticles J. Appl. Phys. 112, 044303 (2012) Stability of the Landau state in square two-dimensional magnetic nanorings J. Appl. Phys. 112, 043901 (2012) Effect of liquid uptake on critical heat flux utilizing a three dimensional, interconnected alumina nano porous surfaces Appl.

In situ, nitrogen rf plasma treatment of organometallic chemical vapor deposited (OMCVD) TiN, synthesized by thermal decomposition of tetrakis(dimethylamido) titanium, yielded films with low resistivity and enhanced chemical stability. A sequential OMCVD-plasma treatment process allowed deposition of films with bulk resistivity as low as 400 μΩ cm. The nitridation resulted in reduction of the carbon concentration in the films, and crystallization of TiN. The composition and electrical properties of the nitridized films were found to be stable upon air exposure. The films possess excellent step coverage (≳70% in 0.35 μm device structures with aspect ratio ∼3) and low defect density (∼0.06 cm−2 for defect size ≥0.2 μm).

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