This paper presents to find a sufficient model of integrated passive structures for high frequency analysis and prediction in power electronic circuits. At high frequencies there are many parasitic oscillations that begin to circulate in the power circuits. Some sources of these oscillations include inter-component connections and their environment begin having electromagnetic significance, unmodeled characteristics in the semiconductor devices, Parasitic impedance characteristics of discrete passive components, Interference from an imperfect source and a ground plane and Interference from radiation. A simulation model involving most of these factors can prove valuable in distinguishing between the causes of parasitic oscillations. A designer can modify the parameters of a particular parasitic element, and observe its effect on the oscillations, hence seeing which factors are the most significant.