A 10 W class-E RF power amplifier (PA) is designed and fabricated using a Cree GaN HEMT. The proposed PA uses an innovative input circuit to optimize band with. At 2.45 GHz the PA achieves a PAE of 60 % at an outputpower of 40 dBm. The resulting amplifier is simulated and constructed using a transmissionline topology. Two of these amplifiers are fabricated on a single board for outphasing application. Their suitability for outphasing application and supply modulation is investigated.

The development of three-dimensional printed circuit boards requires research on new materials which can easily be deformed. Conducting pastes are well suited for deformation even after they are applied to the dielectric carrier. This paper deals with measurements of the electrical conductivity of these conducting pastes. Two different conductivity measurement techniques are explained and carried out. The resulting measurements give an overview of the conductivity of several measured samples.