1 he public reporting burden tor tnis collection ot Intormatlon is estimateo to average 1 hour per response, including the time tor reviewing instructions, searching existing oata sources, gatnenng and maintaining the data needed, and completing and reviewing the collection of information. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S)____ ___ ___ 20061130042 DISTRIBUTIONIAVAILABILITY STATEMENTApproved for public release; distribution is unlimited. SUPPLEMENTARY NOTESThis is the work of the United States Government and therefore is not copyrighted. This work may be copied and disseminated without restriction. Many SSC San Diego public release documents are available in electronic format at: http://www.spawar.navy.mil/sti/publications/pubs/index.html ABSTRACTThe monolithic integration of a Fabry-Perot interferometer and a (100) silicon photodiode is reported for use as a highly sensitive transduction method in the detection of minute displacements of a proof mass attached to a spring. The combination results in a compact device with active transistor-like amplification and minimal parasitic elements. The transducer is fabricated using standard surface micromachining techniques. The finesse of the optical cavity, incident optical power, and geometry of the mirror and support structure control the sensitivity of the transducer. A transduction of more than 2285 A/m, percent change in transmission with displacement of 3%/nm, small-signal voltage amplification of 460 VN output resistance of 100 M0 and transconductance of I mA/V have been obtained thus far for a single device without amplification.

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The crystallization of thin silicon films by scanning with laser‐shaped hot zones has been investigated. Large single crystals were obtained on silicon dioxide layer substrates by controlling the shape of the trailing edge of the traveling liquid zone. A model based on thermodynamic driving forces and geometrically limited kinetics within the undercooled region is proposed to describe the mechanism by which the geometry of the hot zone controls the crystallization of thin films on amorphous substrates.