Boron-doped homoepitaxial diamond films are deposited from ethanol/trimethyl borate/hydrogen mixtures activated by microwave (MW) discharge plasma. The high smoothness, uniform distribution of boron atoms located predominantly in substitution positions, and low concentration of the nitrogen-compensating impurity is achieved. C 2 H 5 OH dissociation pathways in MW plasma-activated (PA)CVD reactor conditions, and the distribution of C x H y O z concentrations in the hot core of C 2 H 5 OH/H 2 plasma are calculated. It is shown that the methyl radical is as responsible for diamond growth in C 2 H 5 OH/H 2 mixtures as for a conventional CH 4 /H 2 mixture.

Boron doped polycrystalline diamond films were grown using MW PE CVD method. Optical emission spectra (OES) of MW-plasma in the region from 200 nm to 800 nm during boron doped polycrystalline diamond films growth were in situ investigated. Raman spectroscopy method was used for morphology investigation of grown polycrystalline diamond films. Also, absorption spectroscopy method was used for optical properties investigation of all grown films.

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A new technology of forming micropatterned masks for the etching of diamond films is proposed, which makes possible high precision lithography on the samples with areas up to 10 4 mm 2 . A minimum ele ment size that can be achieved is only determined by the level of lithography accessible for silicon based inte grated circuits. The proposed technology can be used in creating unique devices, including biosensor chips for human genome decoding.

Diamond membranes are capable of amplifying electron flux, but membranes with dimensions exceeding 10 mm 2 are subject to deformation and sagging. In order to avoid this, it is suggested to build elec tron flux amplifier on a silicon grating coated with a diamond film. The possibility of using these gratings instead of microchannel plates is discussed, in particular, in cases where this grating directly plays the role of X ray, UV, or proton detector.