No abstract

The effects of a supervised 1-y walking program and increased dietary calcium (milk supplement, 831 mg/d, vs placebo drink, 41 mg/d) on bones were examined in 36 postmenopausal women (60.2 +/- 6.5 y). Trabecular bone-mineral density (BMD) of the lumbar spine (L1-L3), measured by computed tomography, increased by 0.5% in exercising women (n = 18) and decreased by 7.0% in sedentary women (n = 18; P = 0.02). Femoral-neck BMD measured by dual-photon absorptiometry (DPA) increased by 2.0% in women consuming high dietary calcium (n = 18) and decreased by 1.1% in those on moderate calcium intake (n = 18; P = 0.001). Neither exercise nor dietary calcium had an effect on lumbar spine (L2-L4) measured by DPA, distal radius measured by single-photon absorptiometry, or total body calcium measured by in vivo neutron activation. The varying proportions and rates of turnover of trabecular and cortical bone from one site to another suggest that exercise and high dietary calcium may preferentially alter bone density at different skeletal sites.

Ferroelectric HfO2 is an attractive candidate for future ferroelectric random access memory devices due to its compatibility with the complementary metal-oxide-semiconductor process, conformal deposition, and scaling ability. Crystallization of HfO2 with different dopants and annealing conditions can produce the stabilization of the monoclinic, tetragonal, cubic, or orthorhombic crystal phases. In this work, the authors observe ferroelectric behavior in Si-doped hafnium oxide with TiN and Ir electrodes. Atomic layer deposited 10 nm HfO2 capacitors doped with varying concentrations of SiO2 have been fabricated in the metal–ferroelectric–insulator–semiconductor (MFIS) structure. The ferroelectric characteristics of thin film HfO2 are compared in the MFIS and metal–ferroelectric–metal configurations. Post-metallization anneals were applied to all thin film ferroelectric HfO2 capacitors, resulting in a remanent polarization of up to 22 μC/cm2 and a range of observed coercive voltages, emphasizing the importance of the annealing conditions, electrode materials, and device structure on the ferroelectric properties of thin film HfO2.

We report the formation of highly oriented rutile titanium dioxide films. Films of a primarily amorphous nature were grown on fused silica by rf reactive sputter deposition using a Ti target and rare gas (Ne or Ar)-O2 discharges. Post-deposition annealing was done at 350–1150 °C in air for 60 minute intervals, followed by an air cool. The phase mixture of the as-deposited films, determined by x-ray diffraction, was of two types: (I) amorphous + rutile + anatase, or (II) amorphous + rutile. All phases were highly oriented with (110) rutile planes and (101) anatase planes parallel to the substrate. Upon annealing, the amorphous component of films containing no anatase transformed entirely to rutile, even at temperatures where it is possible to form anatase, <800 °C, indicating that anatase requires ‘‘seeds’’ to form. The results of this study clearly demonstrate that the crystal structure of the as-deposited film determines the development of the rutile phase with post-deposition annealing.