No abstract

The anodic dissolution of silicon in fluoride media has been investigated by impedance measurements. In nonresonant conditions, behavior typical of metal corrosion is observed: at low positive potentials, up to a first current maximum (regime of porous silicon generation), the main feature of the impedance is an inductive component, accounted for in terms of roughening of the surface; at more positive potentials, corresponding to a first current plateau (electropolishing regime), the main contributions to the impedance arise from the oxide layer formed onto the silicon surface. At potentials beyond