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Supersaturated solutions of phosphorus in silicon were obtained by ion implantation and pulsed ruby laser annealing. The dependence of electron mobility and electrical resistivity on carrier density was accurately determined by Hall effect and resistivity measurements. Maximum dopant concentration was 5×1021 normalatom/cm3 , corresponding to a resistivity of 110 μΩ · cm and to an electron mobility of 11 cm2/V · sec. The stability of these alloys was analyzed by isochronal and isothermal annealing. In the more heavily doped samples a remarkable deactivation of the dopant was verified also for thermal treatments of 1 hr at 300°C. TEM examinations showed a large amount of precipitates with density and size depending on supersaturation. Finally it was observed that the electron mobility depends only on the carrier density and is unaffected by the electrically inactive phosphorus, even when present at very high concentrations.

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Durch P‐Implantation und Tempern mit einem Impuls‐Laser werden an P übersättigte n+‐Schichten mit Elektronenkonzentrationen bis zu 5·1021 cm‐3 hergestellt.