We report on the first implementation of a single photon avalanche diode (SPAD) in 130 nm complementary metaloxide-semiconductor (CMOS) technology. The SPAD is fabricated as p+/n-well junction with octagonal shape. A guard ring of p-well around the p+ anode is used to prevent premature discharge. To investigate the dynamics of the new device, both active and passive quenching methods have been used. Single photon detection is achieved by sensing the avalanche using a fast comparator. The SPAD exhibits a maximum photon detection probability of 41% and a typical dark count rate of 100 kHz at room temperature. Thanks to its timing resolution of 144 ps full-width at half-maximum (FWHM), the SPAD has several uses in disparate disciplines, including medical imaging, 3-D vision, biophotonics, low-light illumination imaging, etc.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.