Superconducting tunneling experiments on niobium single crystals with indium and lead-bismuth counterelectrodes show an isotropic energy-gap value of 3.12±0.05 meV, or 3.93kTc, for 26 junction orientations. Self-consistent analysis criteria have been developed for the determination of gap values. These criteria are not met in the existing literature on transition-metal tunneling.

Articles you may be interested inA transmission electron microscope investigation of the dose dependence of the microstructure of siliconon insulator structures formed by nitrogen implantation of silicon J. Appl. Phys. 69, 3503 (1991); 10.1063/1.348491 Formation of buried nitride silicononinsulator structures studied by Auger electron spectroscopy and transmission electron microscopy High resolution transmission electron microscopy of silicononinsulator formed by high dose oxygen implantation Appl. Phys. Lett. 50, 152 (1987); 10.1063/1.97645 Behavior of dopant diffusion in a silicononinsulator structure formed by highdose oxygen implantation

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X-ray photoemission from Ga 2p3/2 electrons was used to investigate the two polar {111} faces of a polished, single-crystal GaP wafer. It is shown directly by examining, for the first time, the contributions to the photoemission from electrons involved in Ga–Ga, Ga–P, and Ga–O bonds, that one of these faces consists solely of Ga atoms and the reverse face solely of P atoms. The same experiments on both faces of a similar {100} wafer showed that both {100} faces are the same.