Graphene flakes were made from electrochemical exfoliation. To study graphene planes, different volumes of graphene solutions (1, 2, 4, and 7 ml) were sprayed on glass lamellae to get different graphene planes. I–V curve of all samples shows ohmic behavior with resistance in the order of kΩ which increases the slope of the I–V curve with increasing graphene planes (spray volume). The effect of temperature on all samples shows a clear jump in I–T curves. It is found that up to 150 °C current is almost constant, but after that current increases highly in the range of 1.8–10 times and resistance reduces sharply. Also, samples with lower graphene planes affected highly with temperature effect.

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In this paper, a novel ZnO/graphene/porous silicon hybrid device is fabricated and its electrical behaviors are studied along with a ZnO/graphene/silicon device. Graphene (G) is prepared by exfoliation of graphite foil in aqueous solution of inorganic salt. Porous silicon (PS) is fabricated by electrochemical etching of p-type silicon (Si). Graphene is deposited on the surface of Si and PS substrates by thermal spray pyrolysis method. ZnO rods are grown on the samples by using catalyst-free chemical vapor transport and condensation method. The currentvoltage relationships of ZnO/G/Si and ZnO/G/PS devices are studied under different volumes of graphene solution. The results reveal the distinctive features of the I-V characteristics of the two devices for different volumes of graphene solution under room light as well as UV illumination.