This letter demonstrates the use of a traditional screen printing approach for the fabrication of silicon field effect transistors. Using purely additive patterning technologies at room temperature conditions, with no additional postprocessing steps, transistors have been produced on paper substrates that have performance characteristics comparable to amorphous silicon thin film transistors. Insulated gate field effect transistors employing n type silicon in the semiconductor layer operate in accumulation mode with effective carrier mobilities in the range 0.3 to 0.7 cm2 (V s)−1.

Nanomaterials with disordered, ramified structure are increasingly being used for applications where low cost and enhanced performance are desired. A particular example is the use in printed electronics of inorganic conducting and semiconducting nanoparticles. The electrical, as well as other physical properties depend on the arrangement and connectivity of the particles in such aggregate systems. Quantification of aggregate structure and development of structure/property relationships is difficult and progress in the application of these materials in electronics has mainly been empirical. In this paper, a scaling model is used to parameterize the structure of printed electronic layers. This model has chiefly been applied to polymers but surprisingly it shows applicability to these nanolayers. Disordered structures of silicon nanoparticles forming aggregates are investigated using small angle x-ray scattering coupled with the scaling model. It is expected that predictions using these structural parameters can be made for electrical properties. The approach may have wide use in understanding and designing nano-aggregates for electronic devices.

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The production of active semiconductor thick-film components typically involves the deposition of precursor materials and subsequent thermal processing to produce a massive semiconductor layer. In this paper, we present electronic materials, based on nanoparticulate silicon, to produce the active semiconducting layer, which can simply be printed onto low-temperature substrates such as paper. Particular emphasis will be given to the structure, morphology, and composition of the nanoparticles, which are produced by either gas-phase decomposition of silane or mechanical attrition of bulk silicon. Of further importance are the electrical characteristics of the composite materials, in which the active semiconductor is formed from an interconnecting backbone of silicon particles. These will be discussed for example structures, including junction field effect transistors (FETs), insulated-gate FETs, and photodiodes.