Intense femtosecond laser excitation can produce transient states of matter that would otherwise be inaccessible to laboratory investigation. At high excitation densities, the interatomic forces that bind solids and determine many of their properties can be substantially altered. Here, we present the detailed mapping of the carrier density–dependent interatomic potential of bismuth approaching a solid-solid phase transition. Our experiments combine stroboscopic techniques that use a high-brightness linear electron accelerator–based x-ray source with pulse-by-pulse timing reconstruction for femtosecond resolution, allowing quantitative characterization of the interatomic potential energy surface of the highly excited solid.

The development of X-ray and electron diffraction methods with ultrahigh time resolution has made it possible to map directly, at the atomic level, structural changes in solids induced by laser excitation. This has resulted in unprecedented insights into the lattice dynamics of solids undergoing phase transitions. In aluminium, for example, femtosecond optical excitation hardly affects the potential energy surface of the lattice; instead, melting of the material is governed by the transfer of thermal energy between the excited electrons and the initially cold lattice. In semiconductors, in contrast, exciting approximately 10 per cent of the valence electrons results in non-thermal lattice collapse owing to the antibonding character of the conduction band. These different material responses raise the intriguing question of how Peierls-distorted systems such as bismuth will respond to strong excitations. The evolution of the atomic configuration of bismuth upon excitation of its A(1g) lattice mode, which involves damped oscillations of atoms along the direction of the Peierls distortion of the crystal, has been probed, but the actual melting of the material has not yet been investigated. Here we present a femtosecond electron diffraction study of the structural changes in crystalline bismuth as it undergoes laser-induced melting. We find that the dynamics of the phase transition depend strongly on the excitation intensity, with melting occurring within 190 fs (that is, within half a period of the unperturbed A(1g) lattice mode) at the highest excitation. We attribute the surprising speed of the melting process to laser-induced changes in the potential energy surface of the lattice, which result in strong acceleration of the atoms along the longitudinal direction of the lattice and efficient coupling of this motion to an unstable transverse vibrational mode. That is, the atomic motions in crystalline bismuth can be electronically accelerated so that the solid-to-liquid phase transition occurs on a sub-vibrational timescale.

Following graphene growth by thermal decomposition of ethylene on Ir(111) at high temperatures we analyzed the strain state and the wrinkle formation kinetics as function of temperature. Using the moiré spot separation in a low energy electron diffraction pattern as a magnifying mechanism for the difference in the lattice parameters between Ir and graphene, we achieved an unrivaled relative precision of ±0.1 pm for the graphene lattice parameter. Our data reveals a characteristic hysteresis of the graphene lattice parameter that is explained by the interplay of reversible wrinkle formation and film strain. We show that graphene on Ir(111) always exhibits residual compressive strain at room temperature. Our results provide important guidelines for strategies to avoid wrinkling.

Transient control over the atomic potential-energy landscapes of solids could lead to new states of matter and to quantum control of nuclear motion on the timescale of lattice vibrations. Recently developed ultrafast time-resolved diffraction techniques combine ultrafast temporal manipulation with atomic-scale spatial resolution and femtosecond temporal resolution. These advances have enabled investigations of photo-induced structural changes in bulk solids that often occur on timescales as short as a few hundred femtoseconds. In contrast, experiments at surfaces and on single atomic layers such as graphene report timescales of structural changes that are orders of magnitude longer. This raises the question of whether the structural response of low-dimensional materials to femtosecond laser excitation is, in general, limited. Here we show that a photo-induced transition from the low- to high-symmetry state of a charge density wave in atomic indium (In) wires supported by a silicon (Si) surface takes place within 350 femtoseconds. The optical excitation breaks and creates In-In bonds, leading to the non-thermal excitation of soft phonon modes, and drives the structural transition in the limit of critically damped nuclear motion through coupling of these soft phonon modes to a manifold of surface and interface phonons that arise from the symmetry breaking at the silicon surface. This finding demonstrates that carefully tuned electronic excitations can create non-equilibrium potential energy surfaces that drive structural dynamics at interfaces in the quantum limit (that is, in a regime in which the nuclear motion is directed and deterministic). This technique could potentially be used to tune the dynamic response of a solid to optical excitation, and has widespread potential application, for example in ultrafast detectors.

International audienceThe morphology of graphene monolayers on Ir(111) prepared by thermal decomposition of ethylene between 1000 and 1530 K was studied with high resolution low energy electron diffraction. In addition to a well-oriented epitaxial phase, randomly oriented domains are observed for growth temperatures between 1255 and 1460 K. For rotational angles of ±3° around 30° these domains lock-in in a 30° oriented epitaxial phase. Below 1200 K the graphene layer exhibits high disorder and structural disintegrity. Above 1500 K the clear moiré spots reflect graphene in a single orientation epitaxial incommensurate phase