No abstract

No abstract

The behavior of below-gap luminescence of undoped GaN grown by MOCVD has been studied by the scheme of two-wavelength-excited photoluminescence. The emission intensity of shallow donor to valence band transition (IOX) increased while intensities of donor-acceptor pair transition and the Yellow Luminescence band (YLB) decreased after the irradiation of a below-gap excitation source of 1.17 eV. The conventional energy schemes and recombination models have been considered to explain our experimental result but only one model in which YLB is the transition of a shallow donor to a deep state placed at ∼1 eV above the valence band maximum satisfies our result. The defect related parameters that give a qualitative insight in the samples have been evaluated by systematically solving the rate equations and fitting the result with the experiment.

We have succeeded in detecting nonradiative recombination (NRR) centers in InAlGaN multiple quantum wells (MQWs) for the sterilization wavelength at around 265 nm by our scheme of two-wavelength excited photoluminescence (PL). Samples studied are InAlGaN multiple quantum well structures with InAlGaN electron blocking layer grown on sapphire (0001) substrates by metal-organic chemical vapor deposition (MOCVD) technique at the growth temperature of 880 8C (sample A) and 920 8C (sample B). The MQW consists of three InAlGaN wells of 2 nm sandwiched by 7 nm InAlGaN barrier layers. With the addition of the below-gap excitation (BGE) light of 1.17 eV, the PL intensity decreased for the sample A but increased for the sample B. Both change in the PL intensity implies the existence of NRR centers, which were activated by the BGE. We attribute both intensity change to two-levels model and one level model, respectively. Based on rate equation analysis, a set of NRR parameters of sample B was determined by utilizing a saturating tendency of the PL intensity change. Spectroscopic and quantitative advantages of the method enable us to clarify energy distribution of NRR centers without providing electrode.