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High performance short channel OTFTs with field effect mobilities greater than 1cm 2 V -1 s -1 have been developed for OLED driver applications incorporating soluble crystalline semiconductor materials. We highlight the impact of contact resistance on the mobility in these devices and show by functionalising both the source and drain contacts and channel regions in a top gate bottom contact device architecture that the mobility can be significantly improved. Our approach also includes the optimisation of solvent selection from which the semiconductor material is deposited in order to enhance crystalline domain formation.

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This paper report effects of variation spacing of mesa isolation on pHEMT substrate in order get an optimum isolated area. The multilayer pHEMT substrate was used as a substrate and wet etching techniques have been applied to form the islands. The citric mixture used is C2H807:H202:H20 with ratio of 4:1:1. The mesa spacing used in this study was varies at 570, 792 and 835 ,um. The etch time for each spacing was fixed at 3 minutes. The electrical effect of mesa isolation spacing was characterized through current-voltage curve. It was found that the 570 ,um mesa spacing shows optimum current value for mesa isolation. This indicated that 570 ,um mesa spacing etch with citric acid mixture of 4:1:1 ratio for 3 minutes etch time can produce optimum current for application of pHEMT device.