Thin bonded films have many applications (i.e. in information storage and processing systems, and etc.). In many cases, thin bonded films are in a state of residual tension, which can lead to film cracking and crack extension in one layer often accompanies failure in whole systems. In this paper, we analyze a channel crack advanced throughout thickness of an elastic thin film bonded to a dissimilar semi-infinite substrate material via finite element method (FEM). In order to simplify modeling, the problem is idealized as plane strain and a two-dimensional model of a film bonded to an elastic substrate is proposed for simulating channel crack in thin elastic film. Film is modeled by common 4-node and substrate by infinite 4-node meshes. The stress intensity factor (SIF) for cracked thin film has been obtained as a function of elastic mismatch between the substrate and the film. The results indicate that in elastic mismatch state, SIF is more than match state. On the other hand, mismatch state is more sensitive to crack than match state. And SIF has also increased by increasing Young's modulus and Poisson ratio of film.

Nowadays, thin films have many applications in every field. So, in order to improve the performance of thin film devices, it is necessary to characterize their mechanical as well as electrical properties. In this research work we focus on the development of a model for the analysis of the mechanical and electrical properties of silver nanoparticles deposited on silicon substrates. The model consists of inter-particle diffusion modeling and finite element analysis. In this study, through the simulation of the sintering process, it is shown that how the geometry, density, and electrical resistance of the thin film layer are changed with sintering conditions. The model is also used to approximate the values of the film Youngs modulus. Comparing results with experimental results shows the high accuracy of this approach.

In order to improve the performance of thin lm devices, it is necessary to characterize their mechanical, as well as electrical, properties. In this work, a model is developed for analysis of the mechanical and electrical properties and the prediction of residual stresses in thin lms of silver nanoparticles deposited on silicon substrates. The model is based on inter-particle di usion modeling and nite element analysis. Through simulation of the sintering process, it is shown how the geometry, density, and electrical resistance of the thin lm layers are changed by sintering conditions. The model is also used to approximate the values of Young's modulus and the generated residual stresses in the thin lm in the absence and presence of cracks in the lm. The results are validated through comparing them with available experimental data.