A novel lasing scheme for terahertz quantum cascade lasers, based on consecutive phonon-photon-phonon emissions per module, is proposed and experimentally demonstrated. The charge transport of the proposed structure is modeled using a rate equation formalism. An optimization code based on a genetic algorithm was developed to find a four-well design in the GaAs/Al 0.25 Ga 0.75 As material system that maximizes the product of population inversion and oscillator strength at 150 K. The fabricated devices using Au double-metal waveguides show lasing at 3.2 THz up to 138 K. The electrical characteristics display no sign of differential resistance drop at lasing threshold, which suggests -thanks to the rate equation model -a slow depopulation rate of the lower lasing state, a hypothesis confirmed by non-equilibrium Green's function calculations.
We study the operation of an 8.5 µm quantum cascade laser based on GaInAs/AlInAs lattice matched to InP using three different simulation models based on density matrix (DM) and nonequilibrium Green's function (NEGF) formulations. The latter advanced scheme serves as a validation for the simpler DM schemes and, at the same time, provides additional insight, such as the temperatures of the sub-band carrier distributions. We find that for the particular quantum cascade laser studied here, the behavior is well described by simple quantum mechanical estimates based on Fermi's golden rule. As a consequence, the DM model, which includes second order currents, agrees well with the NEGF results. Both these simulations are in accordance with previously reported data and a second regrown device
We designed and demonstrated a terahertz quantum cascade laser based on indirect pump injection to the upper lasing state and phonon scattering extraction from the lower lasing state. By employing a rate equation formalism and a genetic algorithm, an optimized active region design with four-well GaAs/Al0.25Ga0.75As cascade module was obtained and epitaxially grown. A figure of merit which is defined as the ratio of modal gain versus injection current was maximized at 150 K. A fabricated device with a Au metal-metal waveguide and a top n+ GaAs contact layer lased at 2.4 THz up to 128.5 K, while another one without the top n+ GaAs lased up to 152.5 K (1.3ℏω/kB). The experimental results have been analyzed with rate equation and nonequilibrium Green's function models. A high population inversion is achieved at high temperature using a small oscillator strength of 0.28, while its combination with the low injection coupling strength of 0.85 meV results in a low current. The carefully engineered wavefunctions enhance the quantum efficiency of the device and therefore improve the output optical power even with an unusually low injection coupling strength.
The gain spectrum of a terahertz quantum cascade laser is analysed by a non
equilibrium Green's functions approach. Higher harmonics of the response
function were retrievable, providing a way to approach nonlinear phenomena in
quantum cascade lasers theoretically. Gain is simulated under operation
conditions and results are presented both for linear response and strong laser
fields. An iterative way of reconstructing the field strength inside the laser
cavity at lasing conditions is described using a measured value of the level of
the losses of the studied system. Comparison with recent experimental data from
time-domain-spectroscopy indicates that the experimental situation is beyond
linear response.Comment: 4 pages, 3 figures included in text, to appear in Applied Physics
Letter
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