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This paper investigates the ground plane influence on Ultra Thin Body and Buried Oxide (UTBB) FDSOI devices applied in a dynamic threshold voltage (DT) operation (V B =V G ) over the conventional one (V B =0V). The ground plane in enhanced DT (eDT), where the back gate bias is a multiple value of the front gate one (V B =k×V G ), and the inverse eDT mode (V G =k×V B ) were also considered and compared to the other configurations. The presence of the Ground Plane region in all DT configurations results in superior DC parameters like oncurrent/off-current ratio, a steeper subthreshold slope and a higher transconductance.

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