In this work, we demonstrate a very high‐energy density and high‐temperature stability capacitor based on SrTiO3‐substituted BiFeO3 thin films. An energy density of 18.6 J/cm3 at 972 kV/cm is reported. The temperature coefficient of capacitance (TCC) was below 11% from room temperature up to 200°C. These results are of practical importance, because it puts forward a promising novel and environmentally friendly, lead‐free material, for high‐temperature applications in power electronics up to 200°C. Applications include capacitors for low carbon vehicles, renewable energy technologies, integrated circuits, and for the high‐temperature aerospace sector.

Thin lamellae were cut from bulk single crystal BaTiO3 using a focused ion beam microscope. They were then removed and transferred onto single crystal MgO substrates, so that their functional properties could be measured independent of the original host bulk ferroelectric. The temperature dependence of the capacitance of these isolated single crystal films was found to be strongly bulklike, demonstrating a sharp Curie anomaly, as well as Curie–Weiss behavior. In addition, the sudden change in the remanent polarization as a function of temperature at TC was characteristic of a first order phase change. The work represents a dramatic improvement on that previously published by Saad et al. [J. Phys.: Condens. Matter 16, L451 (2004)], as critical shortcomings in the original specimen geometry, involving potential signal contributions from bulk BaTiO3, have now been obviated. That the functional properties of single crystal thin film lamellae are comparable to bulk, and not like those of conventionally deposited heterogeneous thin film systems, has therefore been confirmed.

The manner in which ultrathin films of alumina, deposited at the dielectric-electrode interface, affect the recoverable energy density associated with (BiFeO3)0.6–(SrTiO3)0.4 (BFST) thin film capacitors has been characterised. Approximately 6 nm of alumina on 400 nm of BFST increases the maximum recoverable energy of the system by around 30% from ∼13 Jcc−1 to ∼17 Jcc−1. Essentially, the alumina acts in the same way as a naturally present parasitic “dead-layer,” distorting the polarisation-field response such that the ultimate polarisation associated with the BFST is pushed to higher values of electric field. The work acts as a proof-of-principle to illustrate how the design of artificial interfacial dielectric “dead-layers” can increase energy densities in simple dielectric capacitors, allowing them to compete more generally with other energy storage technologies.

In this paper we probe surface enhanced Raman scattering (SERS) and Surface enhanced Fluorescence (SEF) from probe molecule Rhodamine 6G (Rhod6G) on self-standing Au nanorod array substrates made using a combination of anodization and potentiostatic electrodeposition. The finished substrates were embedded within a porous alumina template. By varying the etching time i.e. the thickness of the alumina, we show that there exists an inverse relationship between SERS and SEF. SERS and SEF also show a nonlinear response to increasing etching time due to an inhomogeneous plasmon activity across the nanorod. By modeling the electromagnetic fields created at different etching times we confirm the nonuniform plasmon activity along the Au nanorods and explain the nonlinear behaviors of SERS and SEF. Optimization of the level of alumina matrix thickness optimizes conditions for obtaining either maximized SERS, SEF or for simultaneously observing both SERS and SEF together.

We report on the successful fabrication of arrays of switchable nanocapacitors made by harnessing the self-assembly of materials. The structures are composed of arrays of 20-40 nm diameter Pt nanowires, spaced 50-100 nm apart, electrodeposited through nanoporous alumina onto a thin film lower electrode on a silicon wafer. A thin film ferroelectric (both barium titanate (BTO) and lead zirconium titanate (PZT)) has been deposited on top of the nanowire array, followed by the deposition of thin film upper electrodes. The PZT nanocapacitors exhibit hysteresis loops with substantial remnant polarizations, while although the switching performance was inferior, the low-field characteristics of the BTO nanocapacitors show dielectric behavior comparable to conventional thin film heterostructures. While registration is not sufficient for commercial RAM production, this is nevertheless an embryonic form of the highest density hard-wired FRAM capacitor array reported to date and compares favorably with atomic force microscopy read-write densities.