on-glass (COG) bonding technique for liquid crystal display (LCD) panels. Gold (Au) bumps on an LSI chip were bonded directly to aluminum (AI) electrodes on a glass required, because the known-good-die PGD) chips cannot be supplied for bare chip mount technology. The authors have developed a new repairable COG bonding technique for LCD 2. Au-AI solid phase diffusion flip-chip b o~d i n g substrate by formation of AI-Au intermetallic compounds in the diffusion layer. The developed repairable bonding technique consists of two-level bonding process. First, the chip was bonded at 250 "C. Partial interconnection could be obtained at the local contact portions between the Au bump and the AI electrode. If the electrical connection failed, the bonded chip was removed. There was a distribution of the area formed AI-Au intermetallic compounds at local contact portions for 250 "C bonding. Some areas formed AI-Au intermetallic comDounds of the AI electrode were sometimes removed with the chip removal. layer was locally exposed at the And an underlying metal remained surface. Then, a new chip was bonded on the same A I electrodes under the same conditions at 250 "C. After obtaining the electrical connection, the second bonding was done at 350 "C. An AlAu4 intermetallic formation was obtained by this bonding in the diffusion layer. Reliability tests of second bonded samples were carried out and the contact resistance between the Au bumps and the AI electrodes was measured by the four-probe resistance measurement. In the case that the exposed area ratio of the underlying metal layer was less than 30% of bonding area for each A I electrode, the stable electrical connection has been kept for a high temperature storage test and a thermal shock test. It was confirmed that a stable electrical connection had been obtained by the proposed repairable bonding process.

The authors have developed a fine pitch chiponglass (COG) bonding technique for LCD panels. An IC chip with gold (Au) bumps was dipped in a stirred indium (In) alloy bath in a nitrogen atmosphere without flux. Shallow-bowl-shaped In alloy bumps were selectively formed onto the Au bumps on the IC electrodes. The average height for the Au core In alloy bump was 23.8 pm. The minimum examined bump pitch was 50 pm, and the bump size was 31 by 31 pm.The In alloy bumps whose minimum pitch were 100 pm were connected to molybdenum (MO) conductors without flux at low pressure (30 gilbump or less) and low temperature (110 "c or less).The temperature was lower than the alloy melting point. The mean contact resistance was 0.78 R.It was been found that the calculation of the minimum bump pitch for the bump sizes and the In alloy bump height is useful for designing new ICs with fine pitch bumps. The developed COG technique allows easy repair. It has been proved through a thermal shock test (TST), a high temperature and high humidity storage test, and a high temperature storage test that the contact resistance changes satisfied the specification. Prototype TFT-LCD panels with 80 pm pitch driver ICs were successfully developed. This new bonding method can be applied to TFT-LCD panels and many other kinds of electronic equipment.