Space radiation is a great danger to electronics and astronauts onboard space vessels. The spectral flux of space electrons, protons and ions for example in the radiation belts is inherently broadband, but this is a feature hard to mimic with conventional radiation sources. Using laser-plasma-accelerators, we reproduced relativistic, broadband radiation belt flux in the laboratory, and used this man-made space radiation to test the radiation hardness of space electronics. Such close mimicking of space radiation in the lab builds on the inherent ability of laser-plasma-accelerators to directly produce broadband Maxwellian-type particle flux, akin to conditions in space. In combination with the established sources, utilisation of the growing number of ever more potent laser-plasma-accelerator facilities worldwide as complementary space radiation sources can help alleviate the shortage of available beamtime and may allow for development of advanced test procedures, paving the way towards higher reliability of space missions.

This study focuses on the ion species and energy dependence of the heavy ion SEE cross section in the sub-LET threshold region through a set of experimental data. In addition, a Monte Carlo based model is introduced and applied, showing a good agreement with the data in the several hundred MeV/n range while evidencing large discrepancies with the measurements in the 10-30 MeV/n interval, notably for the Ne ion. Such discrepancies are carefully analyzed and discussed. Abstract-This study focuses on the ion species and energy dependence of the heavy ion SEE cross section in the sub-LET threshold region through a set of experimental data. In addition, a Monte Carlo based model is introduced and applied, showing a good agreement with the data in the several hundred MeV/n range while evidencing large discrepancies with the measurements in the 10-30 MeV/n interval, notably for the Ne ion. Such discrepancies are carefully analyzed and discussed.

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-Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. Additionally, TCAD simulations are used to give insight on the physical mechanisms involved.