A Comparison of Single-Event Transients in Pristine and Irradiated &lt;formula formulatype="inline"&gt;&lt;tex Notation="TeX"&gt;${{\rm Al}_{0.3}}{{\rm Ga}_{0.7}}{{\rm N}/{\rm GaN}}$&lt;/tex&gt; &lt;/formula&gt; HEMTs using Two-Photon Absorption and Heavy Ions

Khachatrian, Ani; Roche, N.; Büchner, S.; Koehler, Andrew D.; Anderson, Travis J.; Ferlet-Cavrois, V.; Muschitiello, M.; McMorrow, D.; Weaver, B. D.; Hobart, Karl D.

doi:10.1109/tns.2015.2498286

Cited by 29 publications

(13 citation statements)

References 18 publications

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“…SEE occur when a single ionizing particle deposits enough energy in a sensitive volume to cause spontaneous damage in a device or circuit. [80][81][82][83][84][85][86][87][88] There is a threshold amount of ionization needed to cause this disruption due to heavy ions (e.g. primary galactic high charge and energy cosmic rays), neutrons, protons, and heavier ions.…”

Section: Total Dose and Single Event Upsetmentioning

confidence: 99%

“…38 Single event burnout (SEB) in SiC devices is destructive, but developing an understanding of the SEB cross section and FIT rate requires hardware/ test facility beam access. 63,[80][81][82][83][84][85][86][87][88] The sensitive volume and secondary particle spectrum created by neutron-induced reactions must be established as part of a quantitative understanding of the effect on device performance. SiC power MOSFETs are found to be susceptible to heavy-ion irradiation and experience SEB at ground level due to terrestrial neutrons.…”

Section: Total Dose and Single Event Upsetmentioning

confidence: 99%

“…Heavy ion data has been used to determine the threshold energy for SEB under biased operation of the devices. 63,[80][81][82][83][84][85][86][87][88][89][90][91][92][93][94][95][96][97][98] This requires 3-D TCAD modelling and heavy ion simulations to estimate the sensitive volume and identify range/energy particles necessary for initiating SEB. Simulations using the radiation transport tool Monte Carlo radiative energy deposition (MRED) have been used to identify secondary particles from neutron-induced nuclear reactions in SiC which deposit energy exceeding threshold energy criterion in the sensitive volume.…”

Section: Total Dose and Single Event Upsetmentioning

confidence: 99%

“…The use of lasers to simulate SEE enables the generation carriers in well-defined locations in complex circuits. [80][81][82][83][84][85][86][87][88] This has proven indispensable for single-event effects (SEE) and radiation hardness and while not a complete replacement for heavy-ion experiments, it is both versatile and convenient.…”

Section: Total Dose and Single Event Upsetmentioning

confidence: 99%

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Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors

Pearton

Aitkaliyeva

Xian

et al. 2021

ECS J. Solid State Sci. Technol.

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The wide bandgap semiconductors SiC and GaN are already commercialized as power devices that are used in the automotive, wireless, and industrial power markets, but their adoption into space and avionic applications is hindered by their susceptibility to permanent degradation and catastrophic failure from heavy-ion exposure. Efforts to space-qualify these wide bandgap power devices have revealed that they are susceptible to damage from the high-energy, heavy-ion space radiation environment (galactic cosmic rays) that cannot be shielded. In space-simulated conditions, GaN and SiC transistors have shown failure susceptibility at ∼50% of their nominal rated voltage. Similarly, SiC transistors are susceptible to radiation damage-induced degradation or failure under heavy-ion single-event effects testing conditions, reducing their utility in the space galactic cosmic ray environment. In SiC-based Schottky diodes, catastrophic single-event burnout (SEB) and other single-event effects (SEE) have been observed at ∼40% of the rated operating voltage, as well as an unacceptable degradation in leakage current at ∼20% of the rated operating voltage. The ultra-wide bandgap semiconductors Ga2O3, diamond and BN are also being explored for their higher power and higher operating temperature capabilities in power electronics and for solar-blind UV detectors. Ga2O3 appears to be more resistant to displacement damage than GaN and SiC, as expected from a consideration of their average bond strengths. Diamond, a highly radiation-resistant material, is considered a nearly ideal material for radiation detection, particularly in high-energy physics applications. The response of diamond to radiation exposure depends strongly on the nature of the growth (natural vs chemical vapor deposition), but overall, diamond is radiation hard up to several MGy of photons and electrons, up to 1015 (neutrons and high energetic protons) cm−2 and >1015 pions cm−2. BN is also radiation-hard to high proton and neutron doses, but h-BN undergoes a transition from sp2 to sp3 hybridization as a consequence of the neutron induced damage with formation of c-BN. Much more basic research is needed on the response of both the wide and ultra-wide bandgap semiconductors to radiation, especially single event effects.

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Section: Total Dose and Single Event Upsetmentioning

confidence: 99%

Section: Total Dose and Single Event Upsetmentioning

confidence: 99%

Section: Total Dose and Single Event Upsetmentioning

confidence: 99%

Section: Total Dose and Single Event Upsetmentioning

confidence: 99%

See 2 more Smart Citations

Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors

Pearton

Aitkaliyeva

Xian

et al. 2021

ECS J. Solid State Sci. Technol.

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“…2PA has also been used on SiC devices [11], [12], another wide bandgap technology. On GaN technologies, previous works have demonstrated the possibility to inject charge on test structures from the front-side using ultraviolet (UV) laser pulses for single-photon absorption [13] and visible light wavelength for two-photon absorption [14], [15]. On commercial parts, contact balls and metal layers will most often prevent using the frontside approach, and UV light would be completely absorbed by the Si substrate if focused through the backside.…”

Section: Introductionmentioning

confidence: 99%

Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs

Ngom

Pouget

Zerarka

et al. 2021

IEEE Trans. Nucl. Sci.

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We present backside laser testing of GaN power devices on Si substrate using optical parameters compatible with three-photon absorption in GaN and single-photon absorption in the substrate. The laser/device interaction is described. Two different kinds of transients are observed at the gate electrode and analyzed. The technique allows identifying the sensitive regions of the devices and generating destructive events.

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