2020
DOI: 10.1016/j.microrel.2020.113699
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Research of single-event burnout and hardened GaN MISFET with embedded PN junction

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Cited by 8 publications
(5 citation statements)
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“…26,[30][31][32][33][34][35][36][37][38][39][40][41][42] Radiation tolerance is an important factor while fabricating microelectronics and typical radiation damage suffered includes total dose effects, displacement damage, and single event effects. While significant work has been done for radiation effects in GaN [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]59 and SiC, [43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58][60][61][62]…”
mentioning
confidence: 99%
“…26,[30][31][32][33][34][35][36][37][38][39][40][41][42] Radiation tolerance is an important factor while fabricating microelectronics and typical radiation damage suffered includes total dose effects, displacement damage, and single event effects. While significant work has been done for radiation effects in GaN [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]59 and SiC, [43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58][60][61][62]…”
mentioning
confidence: 99%
“…Note the importance of VGa related states. After irradiation, it is observed that the concentration of some of the defects present in the as-grown material increases, suggesting the contained vacancy-related defects to begin with (112)(113)(114)(115)(116)(117)(118)(119)(120)(121)(122)(123)(124)(125)(126)(127)(128)(129) .…”
Section: (V) Summary Of Radiation Trap States and Carrier Removal Rat...mentioning
confidence: 99%
“…Radiation tolerance is an important factor while fabricating microelectronics and typical radiation damage suffered includes total dose effects, displacement damage, and single event effects . While significant work has been done for radiation effects in GaN (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)61) and SiC (45)(46)(47)(48)(49)(50)(51)(52)(53)(54)(55)(56)(57)(58)(59)(60)(62)(63)(64)(65)(66)(67) , the understanding of carrier removal rates, defect levels and annealing regimes for Ga2O3 is on-going (68)(69)(70)(71)(72)(73)(74) .…”
Section: Introductionmentioning
confidence: 99%
“…While there are no experimental or simulation results for single event effects in Ga 2 O 3 to this point, it has become worryingly apparent that while other wide bandgap semiconductors like SiC and GaN are robust against displacement damage and total ionizing dose, they display significant vulnerability to single event effects at high Linear Energy Transfer (LET) and at much lower biases than expected. [6][7][8][9][10][11][12][13][14] For example, SiC power diodes exhibit single-event burnout with onsets for ion-induced leakage current and single-event burnout that saturate quickly with LET. 14 This saturation occurs before the high-flux iron knee of the Galactic Cosmic Ray (GCR) spectrum SiC Schottky diode susceptibility to single event burnout ( SEB) occurs at <50% of avalanche breakdown voltage.…”
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confidence: 99%
“…To date, no tested commercial SiC diodes pass above ∼50% of rated breakdown voltage at NASA mission LET requirement levels. 13,14 Few studies have been carried out to investigate GaN-and SiCbased rectifiers and transistors in terms of single event effects (SEE), [6][7][8][9][10][11][12][13][14][15] while there are none for Ga 2 O 3 rectifiers, to the best of our knowledge. While SEE results on β-Ga 2 O 3 devices are scarce, there are several publications that deal with the effects of heavy ions on β-Ga 2 O 3 materials.…”
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confidence: 99%