No abstract

No abstract

No abstract

A low-temperature (< 300 • C) low-stress microelectromechanical systems fabrication process based on a silicon carbide structural layer is presented. A partially conductive sintered target enables low-temperature dc sputtering of amorphous silicon carbide (SiC) at high deposition rates (75 nm/min). The low stress of the structural film allows for mechanically reliable structures to be fabricated, while the low-temperature deposition allows for pre-SiC metallization. The process is designed for low-cost film deposition and for complementary metal-oxide-semiconductor postintegration, stemming from chemical and thermal compatibility. Process flow, deposition, etching, and stress control are discussed, and a detailed process characterization is reported.[ 2010-0235]Index Terms-Complementary metal-oxide-semiconductor (CMOS) compatible, direct current (dc) sputtering, low temperature, microelectromechanical systems (MEMS), silicon carbide (SiC), stress control, surface micromachining.

No abstract