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The main purpose of this paper is to investigate the effect of bandgap, carrier concentration, minority carrier life time and CdZnTe absorber layer thickness on the thin film solar cell baseline case. The bandgap of Cd1_xZnx Te solar cells are tunable between 1.4SeV and 2.2eV (depends on the value of x). In this research AMPS-ID has been used for simulation.The results of this study indicate that by decreasing the absorber layer's thickness, the efficiency decreases. In the baseline cases, the absorber layer's bandgap was changed from 1.4SeV to 2.0SeV, It was found out that by increasing the energy gap, efficiency increases but after 1.85ev the bandgap will be constant, hence Eg=1.88eV was considered for absorber to analyze the baseline cases. It was observed that by increasing the lifetime and carrier concentrations of absorber layer, the output parameters increase in the cells. However, the baseline cases structures are the same (Sn0 2 /CdS/CdZnTe/Back Contact) and the highest conversion efficiency of 25.505% is obtained by baseline case 2 Osc= 29.819 mA/cm 2 , Voc = 1.28 Volt, FF= 0.731) which has higher doping and minority carriers lifetime.

Thin films of ZnO were deposited on cleaned soda lime glass substrates by using RF magnetron sputtering technique for deposition time of 20mins, 40mins, 60mins, 80mins and 100mins at room temperature. The structural and electrical properties of ZnO thin films were obtained from X-ray diffraction (XRD), Atomic force microscopy (AFM) and Hall Effect measurement. XRD results confirm the presence of (002) crystal orientation of ZnO and improvement of grain size was observed for films with higher deposition time. The average and the R.M.S roughness have been measured from the AFM images and the Hall Effect measurement confirms the carrier concentration, resistivity and mobility. Hall Effect data revealed that the mobility of the carriers of ZnO thin films increased with higher deposition time.