In this study, compounds of B6Si were irradiated using a [Formula: see text]Co gamma source that have an energy line of 1.25 MeV at the absorbed dose rates from 14.6 kGy to 194.4 kGy. Surface morphology images of the sample obtained by Scanning Electron Microscope (SEM) show that the crystal structure at a high absorbed doses [Formula: see text] starts to be destroyed. X-ray diffraction studies revealed that with increasing radiation absorption dose, the spectrum intensity of the sample was decreased 1.96 times compared with the initial value. Thermal properties were studied by Differential scanning calorimetry (DSC) method in the temperature range of 30–1000[Formula: see text]C.

In the presented work, a boron carbide sample with a purity of 99.9%, particle size [Formula: see text]–[Formula: see text]m and a density of [Formula: see text] was used. Boron carbide samples were irradiated with linear electrons in the energy range of 2.5 MeV at the doses of [Formula: see text], [Formula: see text] and [Formula: see text] at room temperature. XRD results show that only in the crystal structure of [Formula: see text] compound, among boron carbide samples irradiated in the dose rate from [Formula: see text] to [Formula: see text] phase transition does not occur. The observed decrease in the lattice parameter values was explained as the strengthening of the bonds as a result of the recombination of defects in the crystal by influencing electron fluence. Dynamics of Raman spectra change and analytic analysis of intensive and duplex modes in various electron fluxes in ([Formula: see text]) CBC-structure were performed and the occurring disorder in Raman active has been identified.

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