Abstract:The main goal of this work is to determine a statistical non-equilibrium distribution function for the electron and holes in semiconductor heterostructures in steady-state conditions. Based on the postulates of local equilibrium, as well as on the integral form of the weighted Gyarmati's variational principle in the force representation, using an alternative method, we have derived general expressions, which have the form of the Fermi-Dirac distribution function with four additional components. The physical interpretation of these components has been carried out in this paper. Some numerical results of a non-equilibrium distribution function for an electron in HgCdTe structures are also presented.

This paper presents a numerical method for solving the set of transport equations in semiconductor heterostructures by using the non-equilibrium distribution function for electrons and holes. This method enables the calculation of carrier concentration, carrier mobility and entropy by integrations in the space of wave vectors. In the same way the electrical current density and density of entropy currents are determined. The influence of quasi-Fermi energy gradients for electrons and holes and the gradient of temperature on the physical parameters of the heterostructure is taken into account.

A simple method for the computation of carrier concentration in n-type doped Hg 1−x Cd x Te (MCT) structures is proposed. The method is based on the postulate of the existence of donor bands. In our model the donor bands are postulated to have a Gaussian distribution of density of states characterized by two parameters only (mean energy for this distribution and standard deviation). These parameters could be obtained with experimental data, which were comprised of a wide range of doping levels for various kinds of dopants.

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