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A theory is presented which relates that current, voltage, and light characteristics of SiC p—ν—n diodes and which applies to transient and de conditions. Based on a simple model, the theoretical predictions compare favourably with a series of measurements made on a four contact diode from which the components of the current—voltage, light—current, and light—voltage plots are readily identified. The sublinear light—current response of these diodes is attributed to injection into the diffusion regions with power law non‐radiative recombination rates; the long light decay is governed by the recombination of the hole minority carriers in the ν diffusion region.

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