In this paper, long wavelength superluminal and subluminal properties of pulse propagation in a defect slab medium doped with four-level GaAs/AlGaAs multiple quantum wells (MQWs) with 15 periods of 17.5 nm GaAs wells and 15 nm [Formula: see text] barriers is theoretically discussed. It is shown that exciton spin relaxation (ESR) between excitonic states in MQWs can be used for controlling the superluminal and subluminal light transmissions and reflections at different wavelengths. We also show that reflection and transmission coefficients depend on the thickness of the slab for the resonance and nonresonance conditions. Moreover, we found that the ESR for nonresonance condition lead to superluminal light transmission and subluminal light reflection.
The transmission and reflection properties of a pulse through a slab doped with quantum dots near a plasmonic nanostructure are investigated theoretically. It is found that by adjusting the distance between plasmonic nanostructure and dual quantum dots which is varied from 8.8 nanometer (nm) to 14.4 nanometer (nm) the transmission and reflection spectra for incident pulse through the slab can be modified. Furthermore, it is found that in the presence of plasmonic nanostructure, the reflected and transmitted pulses are completely phase dependent. Therefore, the group velocity of the reflected and transmitted pulses can be switched from slow to fast light by changing the phase difference of two laser fields.
Electrons in graphene nanoribbons can lead to exceptionally strong optical responses in the infrared and terahertz regions owing to their unusual dispersion relation. Therefore, on the basis of quantum optics and solid-material scientific principles, we show that optical bistability and multistability can be generated in graphene nanostructure under strong magnetic field. We also show that by adjusting the intensity and detuning of infrared laser field, the threshold intensity and hysteresis loop can be manipulated efficiently. The effects of the electronic cooperation parameter which are directly proportional to the electronic number density and the length of the graphene sample are discussed. Our proposed model may be useful for the nextgeneration all-optical systems and information processing based on nano scale devices.
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