In this work, physical and electrical characteristics of atomic-layer-deposited HfxZr1−xnormalO2 formed using tetrakis-ethyl methylaminohafnium (TEMAHf), tetrakis-ethylmethylaminozirconium (TEMAZr), and ozone are reported. Confirming Zr addition, film densities decrease with increasing Zr content. A slight increase in interfacial layer thickness is observed for ZrO2 after high-temperature annealing. All films remain smooth and void-free after high-temperature annealing. Tetragonal phase stabilization is observed with increasing Zr content. Carbon impurities are low and independent of Zr content. HfxZr1−xnormalO2 transistors and capacitors are fabricated for electrical characterization. Well-behaved capacitance–voltage characteristics are observed for all devices. Only a slight increase in gate leakage current is observed as Zr content is increased from <2% (HfO2) to ∼50% (Hf0.5Zr0.5normalO2) . HfxZr1−xnormalO2 devices have ∼50mV lower threshold voltage than HfO2 devices. High field mobilities of HfxZr1−xnormalO2 devices with 50 and 60% Zr content are higher than HfO2 or ZrO2 . All these results indicate HfxZr1−xnormalO2 is a promising dielectric for SiO2 replacement.

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