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The topography of different technological InP substrates has been studied by scanning tunneling microscopy in 0.25M H2SO4, under potentiostatic control. For the best surface preparation corresponding to an ‘‘epiready’’ InP surface, a rms roughness of ∼15–20 Å was measured, approximately ten times higher as for Si surfaces. Finally, it was shown that the growth of a chemical native oxide in HNO3 and its subsequent removal in a dilute HF solution led to a significant improvement of the InP surface topography.