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In this study, titanium dioxide/copper oxide thin-film solar cells were prepared using the reactive direct-current magnetron sputtering technique. The influence of the deposition time of the top Cu contact layer on the structural and electrical properties of photovoltaic devices was analyzed. The structural and morphological characterization of the TiO2/CuO/Cu2O solar cells was fully studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), and current–voltage (I-V) characteristics. Additionally, using van der Pauw sample geometries, the electrical properties of the titanium dioxide and copper oxide layers were investigated. From the XRD study, solar cells were observed in cubic (Cu2O), monoclinic (CuO), and Ti3O5 phases. In addition, the crystallite size and dislocation density for copper oxide layers were calculated. Basic morphological parameters (thickness, mechanism of growth, and composition of elements) were analyzed via scanning electron microscopy. The thicknesses of the titanium dioxide and copper oxide layers were in the range of 43–55 nm and 806–1223 nm, respectively. Furthermore, the mechanism of growth and the basic composition of the elements of layers were analyzed. The I-V characteristic curve confirms the photovoltaic behavior of two titanium dioxide/copper oxide thin-film structures. The values of short-circuit current density (Jsc) and open-circuit voltage (Voc) of the solar cells were: 4.0 ± 0.8 µA/cm2, 16.0 ± 4.8 mV and 0.43 ± 0.61 µA/cm2, 0.54 ± 0.31 mV, respectively. In addition, the authors presented the values of Isc, Pmax, FF, and Rsh. Finally, the resistivity, carrier concentration, and mobility are reported for selected layers with values reflecting the current literature.

We study specially designed strained thin HgTe layers with structural inversion asymmetry (SIA) which allow us to distinguish the topological surface states (TSS) typical for a two dimensional (2D) quantum well system in a subband state. To obtain such a dispersion relation on the basis of the eight-band kp model, the theoretical investigation calculations of thin (below 25 nm wide) HgTe strained films with SIA are investigated. The numerical band-gap engineering and dispersion relation allow us to obtain a new class of materials that are characterized by a Dirac-like dispersion and hybridization of the three different charges describing two TSS and one quantum well subband at Γ-point (zero gap). This opens up many possibilities from the applications point of view. An external electric field removed this degeneration and opened a band gap between Γ6, Γ 8 l h (lh—light hole) and Γ 8 h h (hh—heavy hole) subbands characteristic for TSS and the subband characteristic for the 2D quantum well state, respectively. The width of the band gap as a function of the external electric field is also considered. Due to consideration being given to the possible applications, analysis of the dispersion relation and Landau levels (LL) energy shape with SIA is also investigated. The possibility of tuning a band gap is promising from the point of view of, for example, THz detectors and emitters. What is very important, the proposed structures allow the avoidance of the coexistence of TSS with bulk states, as very often occurs in so-called 3D strained HgTe-like materials. Analysis of the wave function as a function of the width of the investigated structure as well as the external electric field is also presented. Due to the strong correlation between both states (2D and TSS), and their very well known properties, we expect that such HgTe films can be used as optical active layers in the THz region.

We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF. The structures are obtained by molecular beam epitaxy (MBE) for effective strain management, simplified growth scheme, improved material crystalline quality, and improved surface quality. The minimal strain T2SL versus GaSb substrate can be achieved by a special shutters sequence during MBE growth that leads to the formation of both interfaces. The obtained minimal mismatches of the lattice constants is smaller than that reported in the literature. The in-plane compressive strain of 60-period InAs/AlSb T2SL 7ML/6ML and 6ML/5ML was completely balanced by the applied IFs, which is confirmed by the HRXRD measurements. The results of the Raman spectroscopy (measured along the direction of growth) and surface analyses (AFM and Nomarski microscopy) of the investigated structures are also presented. Such InAs/AlSb T2SL can be used as material for a detector in the MIR range and, e.g., as a bottom n-contact layer as a relaxation region for a tuned interband cascade infrared photodetector.