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Crystalline zinc oxide (ZnO) nanostructures have been grown on Si substrates by means of Plasma Based Ion Implantation and Deposition (PIII&D) at temperature of about 300 0 C and in the presence of an argon glow discharge. In the process a crucible filled with small pieces of metallic zinc plays the role of the anode of the discharge itself, being polarized by positive DC voltage of about 400V. Electrons produced by thermionic emission by an oxide cathode (Ba, Sr, Ca)O impact this crucible, causing its heating and vaporization of Zn. Partial ionization of Zn atoms takes place due to collisions with plasma particles. High negative voltage pulses (7 kv/40μs/250Hz) applied to the sample holder cause the implantation of metallic zinc into Si surface, while Zn deposition happens between pulses. After annealing at 700 0 C, strong UV and various visible photoluminescence bands are observed at room temperature, as well as the presence of ZnO nanoparticles. The coated surface was characterized in detail using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. XRD indicated the presence of only ZnO peaks after annealing. The composition analysis by EDS revealed distinct Zn/O stoichiometry relation depending on the conditions of the process. AFM images showed the formation of columns in the nanoscale range. Topography viewed by SEM showed the formation of structures similar to cactus with nanothorns. Depth analysis performed by XPS indicated an increase of concentration of metallic Zn with increasing depth and the exclusive presence of ZnO for outer regions. PIII&D allowed to growing nanostructures of ZnO on Si without the need of a buffer layer.

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We report the first observation, to our knowledge, of ultraviolet upconversion random laser (RL) emission from ZnO films excited by three near-infrared photons in the femtosecond regime. The nanostructured films of ZnO were fabricated on a silicon substrate using the Plasma Immersion Ion Implantation and Deposition method. The band-to-band excitation process led to RL emission with incoherent feedback, emitting light at ≈390 nm. RL emissions excited by one and two photons were also verified using the same pump geometry. The results are discussed and a comparison with previous studies is presented.