A method for microspectroscopy and energy-selective imaging using a special photoemission electron microscope (PEEM) is presented. A modified commercial PEEM was combined with a delay line device as x, y, t detector serving as the basic arrangement for spectromicroscopy. One can measure the time of flight of the electrons passing a drift section in order to analyze the energy distribution of photoelectrons in PEEM. The time of flight is referenced to the time structure of the synchrotron radiation from an electron storage ring. At electron kinetic energies of less than 20 eV within the drift region a spatial resolution of about 100 nm has been obtained. Fast counting electronics (instead of a camera) delivers an image for real-time monitoring on an oscilloscope screen or for image acquisition by a computer. A time resolution of about 500 ps has been obtained with the potential of further improvement. The spatial resolution of the delay line detector is about 50 μm in the image plane corresponding to 1000 pixels in the image diagonal. Direct photoemission from the W-4f core level of a W(110) single-crystal sample was observed at several photon energies. The W-4f fine-structure splitting of 2.3 eV could be well resolved at a pass energy around 40 eV through the drift region.

We report on the development and first experimental results of a “at wavelength” full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet (EUV) lithography. According to the International Semiconductor Roadmap by Sematech, less than 5×10−3 defects per cm2 should be present on such multilayer mask blank to enable mass production of microelectronics using EUV lithography, thus fast high-resolution methods for mask defect inspection and localization are needed. Our approach uses a photoemission electron microscope in a normal incidence illumination mode at 13 nm to image the photoelectron emission induced by the EUV wave field on the multilayer mask blank surface. We show that by these means, buried defects in the multilayer stack can be probed down to a lateral size of 50 nm.

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